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  description specifically designed for automotive applications,this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. advanced planar technology logic-level gate drive low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified s d g absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 55v r ds(on) max. 27m ? i d 42a gds gate drain source d-pak auirlru2905 i-pak auirlu2905       
 

base part number package type complete part number form quantity auirlr2905 dpak tube 75 auirlr2905 tape and reel 2000 AUIRLR2905TR tape and reel left 3000 AUIRLR2905TRl tape and reel right 3000 AUIRLR2905TRr auirlu2905 ipak tube 75 auirlu2905 standard pack parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited)  mj e as (tested ) single pulse avalanche energy tested value  i ar avalanche current  a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) 300 110 0.71 16 11 200 210 25 -55 to + 175 max. 4230 160 1 










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  v dd = 25v, starting t j = 25c, l =470 h r g = 25 ? , i as = 25a. (see figure 12)   repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 )  pulse width ?? 300 s; duty cycle ? 2%.  when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994.   r ?? is measured at tj approximately 90c.  i sd ? 25a, di/dt ? 270a/ s, v dd ? v (br)dss , t j ? 175c notes: s d g s d g thermal resistance parameter typ. max. units r ? jc junction-to-case CCC 1.4 r ? ja junction-to-ambient (pcb mount)  CCC 50 c/w r ? ja junction-to-ambient CCC 110 static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 CCC CCC v ? v (b r)ds s / ? t j breakdown voltage temp. coefficient CCC 0.070 CCC v/c CCC CCC 0.027 r ds(on) static drain-to-source on-resistance CCC CCC 0.030 ? CCC CCC 0.040 v gs (t h) gate threshold voltage 1.0 CCC 2.0 v gfs forward transconductance 21 CCC CCC s i dss drain-to-source leakage current CCC CCC 25 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC CCC 48 q gs gate-to-source charge CCC CCC 8.6 nc q gd gate-to-drain ("miller") charge CCC CCC 25 t d(on) turn-on delay time CCC 11 CCC t r rise time CCC 84 CCC t d(off) turn-off delay time CCC 26 CCC ns t f fall time CCC 15 CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 1700 CCC c oss output capacitance CCC 400 CCC c rs s reverse transfer capacitance CCC 150 CCC pf diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 42 (body diode) a i sm pulsed source current CCC CCC 160 (body diode)  v sd diode forward voltage CCC CCC 1.3 v dv/dt peak diode recovery  CCC 5.0 CCC v/ns t rr reverse recovery time CCC 80 120 ns q rr reverse recovery charge CCC 210 320 nc t on forward turn-on time intrins ic turn-on time is negligible (turn-on is dominated by l s +l d ) di/dt = 100a/ s  conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 25a  v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c t j = 175c, i s = 25a, v ds = 55v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 25a, v gs = 0v  t j = 25c, i f = 25a v ds = 44v conditions v gs = 5.0v, r d = 1.1 ?  v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 v gs = 5.0v  v dd = 28v i d = 25a r g = 3.4 ? v gs = 5.0v, i d = 25a  v gs = 4.0v, i d = 21a  v ds = 25v, i d = 25a i d = 25a v gs = 16v v gs = -16v conditions downloaded from: http:///
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 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20 s pulse width t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20 s pulse width t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v j 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) t = 175c j a v = 25v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 41a d downloaded from: http:///
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 " fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 400 800 1200 1600 2000 2400 2800 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 3 6 9 12 15 0 1 02 03 04 05 06 07 0 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v i = 25a dsds d 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10 s 100 s 1ms 10ms a t = 25c t = 175c single pulse cj downloaded from: http:///
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  fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms   
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  + -   fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
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  q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - 
# fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 100 200 300 400 500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top 10a 17a bottom 25a v = 25v d dd downloaded from: http:///
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  p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets $       
  

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  tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch  
          
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,0 d-pak msl1 i-pak msl1 charged device model class c5 (+/- 1125v) ?? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. rohs complia nt yes esd machine model class m4 (+/- 425v) ?? aec-q101-002 human body model class h1b (+/- 1000v) ?? aec-q101-001 downloaded from: http:///
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 unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir)reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///


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